Renesas Electronics America Inc-2SK4093TZ-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Rds On (Max) @ Id, Vgs:	2.6Ohm @ 500mA, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	5.5 nC @ 4 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	140 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92MOD
Package / Case:	TO-226-3, TO-92-3 Long Body

Renesas Electronics America Inc 2SK4093TZ-E