2SK3814-AZ
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Renesas Electronics America Inc 2SK3814-AZ

Manufacturer No:
2SK3814-AZ
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SK3814-AZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 60A TO251
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:8.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:5450 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta), 84W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number 2SK3814-AZ 2SK3813-AZ  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 30A, 10V 5.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 96 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 5450 pF @ 10 V 5500 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1W (Ta), 84W (Tc) 1W (Ta), 84W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-251 TO-251
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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