2SK3635-Z-E1-AZ
  • Share:

Renesas Electronics America Inc 2SK3635-Z-E1-AZ

Manufacturer No:
2SK3635-Z-E1-AZ
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SK3635-Z-E1-AZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 8A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:430mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (MP-3Z)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.07
525

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2SK3635-Z-E1-AZ 2SK3634-Z-E1-AZ  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 430mOhm @ 4A, 10V 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 9 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 10 V 270 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252 (MP-3Z) TO-252 (MP-3Z)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IPS135N03LG
IPS135N03LG
Infineon Technologies
N-CHANNEL POWER MOSFET
MTAJ30N06ELFK
MTAJ30N06ELFK
onsemi
NFET T0220FP JPN
SI2393DS-T1-GE3
SI2393DS-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 6.1A/7.5A SOT23
BUK9Y58-75B,115
BUK9Y58-75B,115
Nexperia USA Inc.
MOSFET N-CH 75V 20.73A LFPAK56
IXFP80N25X3
IXFP80N25X3
IXYS
MOSFET N-CH 250V 80A TO220AB
SIRA32DP-T1-RE3
SIRA32DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 25V 60A PPAK SO-8
IRFRC20TRLPBF
IRFRC20TRLPBF
Vishay Siliconix
MOSFET N-CH 600V 2A DPAK
IRFR48ZPBF
IRFR48ZPBF
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
STP40NS15
STP40NS15
STMicroelectronics
MOSFET N-CH 150V 40A TO220AB
TK4A60DA(STA4,Q,M)
TK4A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 3.5A TO220SIS
HAT2266HWS-E
HAT2266HWS-E
Renesas Electronics America Inc
MOSFET N-CH 60V 30A 5LFPAK
BUK7C2R2-60EJ
BUK7C2R2-60EJ
NXP USA Inc.
MOSFET N-CH 60V 200A D2PAK-7

Related Product By Brand

XLH735150.553000I
XLH735150.553000I
Renesas Electronics America Inc
XTAL OSC XO 150.5530MHZ HCMOS
8T79S308NLGI/W
8T79S308NLGI/W
Renesas Electronics America Inc
VFQFPN 6.00X6.00X0.90 MM, 0.50MM
8N3DV85LC-0112CDI
8N3DV85LC-0112CDI
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N3SV75LC-0076CDI
8N3SV75LC-0076CDI
Renesas Electronics America Inc
IC OSC VCXO 200MHZ 6-CLCC
8N4DV85AC-0016CDI
8N4DV85AC-0016CDI
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N3QV01FG-0009CDI8
8N3QV01FG-0009CDI8
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
R5F563TBDDFB#H1
R5F563TBDDFB#H1
Renesas Electronics America Inc
IC MCU 32BIT 256KB FLSH 144LFQFP
R5F104MJAFB#V0
R5F104MJAFB#V0
Renesas Electronics America Inc
IC MCU 16BIT 256KB FLASH 80LQFP
ISL32745EIBZ-T
ISL32745EIBZ-T
Renesas Electronics America Inc
IC TRANSCEIVER FULL 1/1 16SOIC
IDT74SSTVN16859NLG
IDT74SSTVN16859NLG
Renesas Electronics America Inc
IC BUFFER 13-26BIT SSTL 56VFQFPN
709079L9PF8
709079L9PF8
Renesas Electronics America Inc
IC SRAM 256KBIT PARALLEL 100TQFP
ISL21080CIH315Z-T7A
ISL21080CIH315Z-T7A
Renesas Electronics America Inc
IC VREF SERIES 0.5% SOT23-3