2SK3634-Z-E1-AZ
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Renesas Electronics America Inc 2SK3634-Z-E1-AZ

Manufacturer No:
2SK3634-Z-E1-AZ
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SK3634-Z-E1-AZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 6A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (MP-3Z)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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556

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Similar Products

Part Number 2SK3634-Z-E1-AZ 2SK3635-Z-E1-AZ  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 430mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 12 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V 390 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252 (MP-3Z) TO-252 (MP-3Z)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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