Renesas Electronics America Inc-2SK3479-Z-E1-AZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	11mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	210 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	11000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.5W (Ta), 125W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263, TO-220SMD
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Renesas Electronics America Inc 2SK3479-Z-E1-AZ