2SK3432-AZ
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Renesas Electronics America Inc 2SK3432-AZ

Manufacturer No:
2SK3432-AZ
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SK3432-AZ Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$3.23
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Similar Products

Part Number 2SK3432-AZ 2SK3482-AZ   2SK3430-AZ  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Last Time Buy Obsolete
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 100 V 40 V
Current - Continuous Drain (Id) @ 25°C - 36A (Ta) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs - 33mOhm @ 18A, 10V 7.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs - 72 nC @ 10 V 50 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 3600 pF @ 10 V 2800 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - 1W (Ta), 50W (Tc) 1.5W (Ta), 84W (Tc)
Operating Temperature - 150°C (TJ) 150°C (TJ)
Mounting Type - Through Hole Through Hole
Supplier Device Package - TO-251 TO-220AB
Package / Case - TO-251-3 Short Leads, IPak, TO-251AA TO-220-3

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