2SK3430-AZ
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Renesas Electronics America Inc 2SK3430-AZ

Manufacturer No:
2SK3430-AZ
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
2SK3430-AZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:7.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 84W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number 2SK3430-AZ 2SK3432-AZ  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V -
Current - Continuous Drain (Id) @ 25°C 80A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V -
Rds On (Max) @ Id, Vgs 7.3mOhm @ 40A, 10V -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 84W (Tc) -
Operating Temperature 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package TO-220AB -
Package / Case TO-220-3 -

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