2SK2729-E
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Renesas Electronics America Inc 2SK2729-E

Manufacturer No:
2SK2729-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SK2729-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 20A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):150W (Ta)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number 2SK2729-E 2SK2529-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 500 V -
Current - Continuous Drain (Id) @ 25°C 20A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 150W (Ta) -
Operating Temperature 150°C -
Mounting Type Through Hole -
Supplier Device Package TO-3P -
Package / Case TO-3P-3, SC-65-3 -

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