Renesas Electronics America Inc-2SK2315TYTR-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 4V
Rds On (Max) @ Id, Vgs:	450mOhm @ 1A, 4V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	173 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	UPAK
Package / Case:	TO-243AA

Renesas Electronics America Inc 2SK2315TYTR-E