Renesas Electronics America Inc-2SK2221-E - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	600 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	100W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P
Package / Case:	TO-220-3 Full Pack

Renesas Electronics America Inc 2SK2221-E