2SK1519-E
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Renesas Electronics America Inc 2SK1519-E

Manufacturer No:
2SK1519-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SK1519-E Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$39.76
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Similar Products

Part Number 2SK1519-E 2SK1518-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V
Current - Continuous Drain (Id) @ 25°C - 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 270mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds - 3050 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 120W (Tc)
Operating Temperature - 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - TO-3P
Package / Case - TO-220-3 Full Pack

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