2SK1518-E
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Renesas Electronics America Inc 2SK1518-E

Manufacturer No:
2SK1518-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
2SK1518-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 20A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3050 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number 2SK1518-E 2SK1519-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 500 V -
Current - Continuous Drain (Id) @ 25°C 20A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 270mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 120W (Tc) -
Operating Temperature 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package TO-3P -
Package / Case TO-220-3 Full Pack -

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