2SK1342-E
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Renesas Electronics America Inc 2SK1342-E

Manufacturer No:
2SK1342-E
Manufacturer:
Renesas Electronics America Inc
Package:
Tube
Datasheet:
2SK1342-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 8A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1730 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number 2SK1342-E 2SK1340-E   2SK1341-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 5A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 4A, 10V 4Ohm @ 3A, 10V 3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 10 V 740 pF @ 10 V 980 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 100W (Tc) 100W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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