2SJ687-ZK-E1-AY
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Renesas Electronics America Inc 2SJ687-ZK-E1-AY

Manufacturer No:
2SJ687-ZK-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
2SJ687-ZK-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 20A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta), 36W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (MP-3ZK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 20A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 4.5V -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 4.5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1W (Ta), 36W (Tc) -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-252 (MP-3ZK) -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -

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