2SJ687-ZK-E1-AY
  • Share:

Renesas Electronics America Inc 2SJ687-ZK-E1-AY

Manufacturer No:
2SJ687-ZK-E1-AY
Manufacturer:
Renesas Electronics America Inc
Package:
Tape & Reel (TR)
Datasheet:
2SJ687-ZK-E1-AY Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 20A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta), 36W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (MP-3ZK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.46
6

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 20A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 4.5V -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 4.5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1W (Ta), 36W (Tc) -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-252 (MP-3ZK) -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -

Related Product By Categories

FDMS86263P
FDMS86263P
onsemi
MOSFET P-CH 150V 4.4A/22A 8PQFN
IAUT300N10S5N015ATMA1
IAUT300N10S5N015ATMA1
Infineon Technologies
MOSFET N-CH 100V 300A 8HSOF
IPB034N06L3GATMA1
IPB034N06L3GATMA1
Infineon Technologies
MOSFET N-CH 60V 90A D2PAK
IXTH48N65X2
IXTH48N65X2
IXYS
MOSFET N-CH 650V 48A TO247
SIHB4N80E-GE3
SIHB4N80E-GE3
Vishay Siliconix
MOSFET N-CH 800V 4.3A D2PAK
LSIC1MO120G0080
LSIC1MO120G0080
Littelfuse Inc.
MOSFET SIC 1200V 25A TO247-4L
YJL3404A-F2-0000HF
YJL3404A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 30V 5.6A SOT-23-3L
ITD50N04S4L07ATMA1
ITD50N04S4L07ATMA1
Infineon Technologies
ITD50N04 - 20V-40V N-CHANNEL AUT
IRLR7811WPBF
IRLR7811WPBF
Infineon Technologies
MOSFET N-CH 30V 64A DPAK
NP60N03SUG-E1-AY
NP60N03SUG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 30V 60A TO252
PMT760EN,135
PMT760EN,135
NXP USA Inc.
MOSFET N-CH 100V 900MA SOT223
RQ5L030SNTL
RQ5L030SNTL
Rohm Semiconductor
MOSFET N-CH 60V 3A TSMT3

Related Product By Brand

8N4SV75LC-0184CDI8
8N4SV75LC-0184CDI8
Renesas Electronics America Inc
IC OSC VCXO 156.25MHZ 6CLCC
8N3SV76EC-0177CDI
8N3SV76EC-0177CDI
Renesas Electronics America Inc
IC OSC VCXO 1124MHZ 6CLCC
8N4SV76LC-0088CDI8
8N4SV76LC-0088CDI8
Renesas Electronics America Inc
IC OSC VCXO 156.25MHZ 6-CLCC
8N3Q001FG-0128CDI
8N3Q001FG-0128CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
X9315WSIZ-2.7T1
X9315WSIZ-2.7T1
Renesas Electronics America Inc
IC DGTL POT 10KOHM 32TAP 8SOIC
ISL90460UIH527-TK
ISL90460UIH527-TK
Renesas Electronics America Inc
IC DGTL POT 50KOHM 32TAP SOT23-5
X9015US8T1
X9015US8T1
Renesas Electronics America Inc
IC DGTL POT 50KOHM 32TAP 8SOIC
R5F10RLAANB#20
R5F10RLAANB#20
Renesas Electronics America Inc
IC MCU 16BIT 16KB FLASH 64HWQFN
R5F523T3ADFM#50
R5F523T3ADFM#50
Renesas Electronics America Inc
IC MCU 32BIT 64KB FLASH 64LFQFP
R5F101GFDFB#V0
R5F101GFDFB#V0
Renesas Electronics America Inc
IC MCU 16BIT 96KB FLASH 48LFQFP
ZL2004ALNFT
ZL2004ALNFT
Renesas Electronics America Inc
IC REG CTRLR BUCK PMBUS 32QFN
ISL9104IRUAZ-T
ISL9104IRUAZ-T
Renesas Electronics America Inc
IC REG BUCK ADJ 500MA 6UTDFN