2SJ546-E
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Renesas Electronics America Inc 2SJ546-E

Manufacturer No:
2SJ546-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SJ546-E Datasheet
ECAD Model:
-
Description:
P-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

-
520

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Similar Products

Part Number 2SJ546-E 2SJ542-E   2SJ545-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type - N-Channel -
Technology - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - 60 V -
Current - Continuous Drain (Id) @ 25°C - 18A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs - 65mOhm @ 9A, 10V -
Vgs(th) (Max) @ Id - 2V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds - 1300 pF @ 10 V -
FET Feature - - -
Power Dissipation (Max) - 60W (Tc) -
Operating Temperature - 150°C -
Mounting Type - Through Hole -
Supplier Device Package - TO-220AB -
Package / Case - TO-220-3 -

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