2SJ542-E
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Renesas Electronics America Inc 2SJ542-E

Manufacturer No:
2SJ542-E
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Datasheet:
2SJ542-E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 18A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:65mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number 2SJ542-E 2SJ545-E   2SJ546-E  
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Product Status Active Active Active
FET Type N-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 60 V - -
Current - Continuous Drain (Id) @ 25°C 18A (Ta) - -
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 10V - -
Vgs(th) (Max) @ Id 2V @ 1mA - -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V - -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 10 V - -
FET Feature - - -
Power Dissipation (Max) 60W (Tc) - -
Operating Temperature 150°C - -
Mounting Type Through Hole - -
Supplier Device Package TO-220AB - -
Package / Case TO-220-3 - -

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