Renesas Electronics America Inc-2SJ243-T1-A - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	25Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:	2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	16 pF @ 5 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	SC-75-3, USM
Package / Case:	SC-75, SOT-416

Renesas Electronics America Inc 2SJ243-T1-A