Renesas Electronics America Inc-2SC5509-T2-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.3V
Frequency - Transition:	15GHz
Noise Figure (dB Typ @ f):	1.2dB @ 2GHz
Gain:	14dB
Power - Max:	190mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 2V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	SOT-343

Renesas Electronics America Inc 2SC5509-T2-A