Renesas Electronics America Inc-2SC5508-T2-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.3V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	1.1dB @ 2GHz
Gain:	17dB
Power - Max:	115mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 2V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	SOT-343F

Renesas Electronics America Inc 2SC5508-T2-A