Renesas Electronics America Inc-2SC5455-T1-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	12GHz
Noise Figure (dB Typ @ f):	1.5dB @ 2GHz
Gain:	10dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 30mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143

Renesas Electronics America Inc 2SC5455-T1-A