Renesas Electronics America Inc-2SC3357-T1-A - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	6.5GHz
Noise Figure (dB Typ @ f):	1.8dB @ 1GHz
Gain:	10dB
Power - Max:	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89

Renesas Electronics America Inc 2SC3357-T1-A