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| Part Number | SSP1N60B | SSS1N60B | SSP2N60B | SSP1N50B | SSP1N60A |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V | 600 V | 520 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) | 1A (Tj) | 2A (Tc) | 1.5A (Tc) | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 500mA, 10V | 12Ohm @ 500mA, 10V | 5Ohm @ 1A, 10V | 5.3Ohm @ 750mA, 10V | 12Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V | 7.7 nC @ 10 V | 17 nC @ 10 V | 11 nC @ 10 V | 11 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 25 V | 215 pF @ 25 V | 490 pF @ 25 V | 340 pF @ 25 V | 190 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 34W (Tc) | 17W (Tc) | 54W (Tc) | 36W (Tc) | 34W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220 | TO-220F | TO-220 | TO-220 | TO-220 |
| Package / Case | TO-220-3 | TO-220-3 Full Pack | TO-220-3 | TO-220-3 | TO-220-3 |
