Fairchild Semiconductor-SSN1N45BBU - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	450 V
Current - Continuous Drain (Id) @ 25°C:	500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:	3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.5 nC @ 10 V
Vgs (Max):	±50V
Input Capacitance (Ciss) (Max) @ Vds:	240 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

Fairchild Semiconductor SSN1N45BBU