SI6467DQ
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Fairchild Semiconductor SI6467DQ

Manufacturer No:
SI6467DQ
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
SI6467DQ Datasheet
ECAD Model:
-
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:12mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:5878 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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$0.24
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Similar Products

Part Number SI6467DQ SI6463DQ   SI6466DQ  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta) 8.8A (Ta) 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 12mOhm @ 9.2A, 4.5V 12.5mOhm @ 8.8A, 4.5V 15mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 4.5 V 66 nC @ 4.5 V 20 nC @ 4.5 V
Vgs (Max) ±8V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 5878 pF @ 10 V 5045 pF @ 10 V 1320 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 600mW (Ta) 600mW (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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