Fairchild Semiconductor-SFM9110TF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

Part Number	SFM9110TF	SFR9110TF
Manufacturer	Fairchild Semiconductor	Fairchild Semiconductor
Product Status	Obsolete	Obsolete
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	100 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V	1.2Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V	10 nC @ 10 V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	335 pF @ 25 V	335 pF @ 25 V
FET Feature	-	-
Power Dissipation (Max)	2.52W (Ta)	2.5W (Ta), 20W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	SOT-223-4	TO-252, (D-Pak)
Package / Case	TO-261-4, TO-261AA	TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	335 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.52W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223-4
Package / Case:	TO-261-4, TO-261AA

Fairchild Semiconductor SFM9110TF