Please send RFQ , we will respond immediately.
| Part Number | RFP8P10 | RFP6P10 |
|---|---|---|
| Manufacturer | Fairchild Semiconductor | Harris Corporation |
| Product Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 8A, 10V | 600mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - | - |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | 800 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 75W (Tc) | 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB |
| Package / Case | TO-220-3 | TO-220-3 |
