Fairchild Semiconductor-RFD8P06LE - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 5V
Rds On (Max) @ Id, Vgs:	300mOhm @ 8A, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 10 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	675 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	48W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

Fairchild Semiconductor RFD8P06LE