Fairchild Semiconductor-RFD4N06LSM9A - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	600mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8 nC @ 10 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	30W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Fairchild Semiconductor RFD4N06LSM9A