Fairchild Semiconductor-KSR1004BU - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA
Frequency - Transition:	250 MHz
Power - Max:	300 mW
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92

Fairchild Semiconductor KSR1004BU