Fairchild Semiconductor-KSP45TF - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSP45TF	KSP75TF	KSP44TF	KSP45TA
Manufacturer	Fairchild Semiconductor	onsemi	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Obsolete	Active	Active
Transistor Type	NPN	PNP - Darlington	NPN	NPN
Current - Collector (Ic) (Max)	300 mA	500 mA	300 mA	300 mA
Voltage - Collector Emitter Breakdown (Max)	350 V	40 V	400 V	350 V
Vce Saturation (Max) @ Ib, Ic	750mV @ 5mA, 50mA	1.5V @ 100µA, 100mA	750mV @ 5mA, 50mA	750mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	500nA	500nA	500nA	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 10V	10000 @ 100mA, 5V	50 @ 10mA, 10V	50 @ 10mA, 10V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	-	-	-	-
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	300 mA
Voltage - Collector Emitter Breakdown (Max):	350 V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 10V
Power - Max:	625 mW
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

Fairchild Semiconductor KSP45TF