Fairchild Semiconductor-KSD1616GBU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSD1616GBU	KSD1616LBU	KSD1616YBU	KSD1616AGBU
Manufacturer	Fairchild Semiconductor	Fairchild Semiconductor	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Active
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	60 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 1A	300mV @ 50mA, 1A	300mV @ 50mA, 1A	300mV @ 50mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V	300 @ 100mA, 2V	135 @ 100mA, 2V	200 @ 100mA, 2V
Power - Max	750 mW	750 mW	750 mW	750 mW
Frequency - Transition	160MHz	160MHz	160MHz	160MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

Fairchild Semiconductor KSD1616GBU

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	750 mW
Frequency - Transition:	160MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3