Fairchild Semiconductor-KSC2785YBU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSC2785YBU	KSC2787YBU	KSC2785GBU	KSC2785OBU
Manufacturer	Fairchild Semiconductor	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	150 mA	50 mA	150 mA	150 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	30 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA	300mV @ 1mA, 10mA	300mV @ 10mA, 100mA	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	120 @ 1mA, 6V	200 @ 1mA, 6V	70 @ 1mA, 6V
Power - Max	250 mW	250 mW	250 mW	250 mW
Frequency - Transition	300MHz	300MHz	300MHz	300MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body	TO-226-3, TO-92-3 Short Body	TO-226-3, TO-92-3 Short Body	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S	TO-92S	TO-92S	TO-92S

Fairchild Semiconductor KSC2785YBU

Transistor Type:	NPN
Current - Collector (Ic) (Max):	150 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	250 mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Short Body
Supplier Device Package:	TO-92S