Fairchild Semiconductor-KSB1116AGBU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	KSB1116AGBU	KSB1116AYBU	KSB1116GBU	KSB1116ALBU
Manufacturer	Fairchild Semiconductor	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	50 V	60 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 1A	300mV @ 50mA, 1A	300mV @ 50mA, 1A	300mV @ 50mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 2V	135 @ 100mA, 2V	200 @ 100mA, 2V	300 @ 100mA, 2V
Power - Max	750 mW	750 mW	750 mW	750 mW
Frequency - Transition	120MHz	120MHz	120MHz	120MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

Fairchild Semiconductor KSB1116AGBU

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	750 mW
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3