ISL9N312AD3STNL
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Fairchild Semiconductor ISL9N312AD3STNL

Manufacturer No:
ISL9N312AD3STNL
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
ISL9N312AD3STNL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A TO252AA
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):75W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number ISL9N312AD3STNL ISL9N312AD3ST_NL  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V 1450 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 75W (Ta) 75W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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