IRFW640BTM
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Fairchild Semiconductor IRFW640BTM

Manufacturer No:
IRFW640BTM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
IRFW640BTM Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRFW640BTM IRFW740BTM   IRFW644BTM   IRFW840BTM   IRFW610BTM   IRFW620BTM   IRFW630BTM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 400 V 250 V 500 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 10A (Tc) 14A (Tc) 8A (Tc) 3.3A (Tc) 5A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 10V 540mOhm @ 5A, 10V 280mOhm @ 7A, 10V 800mOhm @ 4A, 10V 1.5Ohm @ 1.65A, 10V 800mOhm @ 2.5A, 10V 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 53 nC @ 10 V 60 nC @ 10 V 53 nC @ 10 V 9.3 nC @ 10 V 16 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1800 pF @ 25 V 1600 pF @ 25 V 1800 pF @ 25 V 225 pF @ 25 V 390 pF @ 25 V 720 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.13W (Ta) 3.13W (Ta), 134W (Tc) 3.13W (Ta), 139W (Tc) 3.13W (Ta), 134W (Tc) 3.13W (Ta), 38W (Tc) 3.13W (Ta), 47W (Tc) 3.13W (Ta), 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK D2PAK (TO-263) D2PAK (TO-263) D2PAK D2PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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