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| Part Number | IRFW610BTM | IRFW640BTM | IRFW620BTM | IRFW710BTM | IRFW630BTM |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V | 400 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) | 18A (Tc) | 5A (Tc) | 2A (Tc) | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.65A, 10V | 180mOhm @ 9A, 10V | 800mOhm @ 2.5A, 10V | 3.4Ohm @ 1A, 10V | 400mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V | 58 nC @ 10 V | 16 nC @ 10 V | 10 nC @ 10 V | 29 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 25 V | 1700 pF @ 25 V | 390 pF @ 25 V | 330 pF @ 25 V | 720 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 38W (Tc) | 3.13W (Ta) | 3.13W (Ta), 47W (Tc) | 3.13W (Ta), 36W (Tc) | 3.13W (Ta), 72W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
