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| Part Number | IRFW520ATM | IRFW530ATM | IRFW540ATM | IRFW550ATM |
|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Active | Active | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | - |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) | 14A (Tc) | 28A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 10V | 110mOhm @ 7A, 10V | 52mOhm @ 14A, 10V | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 36 nC @ 10 V | 78 nC @ 10 V | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V | 790 pF @ 25 V | 1710 pF @ 25 V | - |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | 3.8W (Ta), 55W (Tc) | 3.8W (Ta), 107W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Supplier Device Package | D2PAK | D2PAK | D2PAK (TO-263) | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
