IRFR220BTM
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Fairchild Semiconductor IRFR220BTM

Manufacturer No:
IRFR220BTM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
IRFR220BTM Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Similar Products

Part Number IRFR220BTM IRFR210BTM  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.3A, 10V 1.5Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 9.3 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V 225 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 40W (Tc) 2.5W (Ta), 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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