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| Part Number | IRF710 | IRF710B | IRF720 | IRF710S | IRF710L |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Vishay Siliconix | Vishay Siliconix |
| Product Status | Obsolete | Active | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V | 400 V | 400 V | 400 V | 400 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) | 2A (Tc) | 3.3A (Tc) | 2A (Tc) | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.1A, 10V | 3.4Ohm @ 1A, 10V | 1.8Ohm @ 2A, 10V | 3.6Ohm @ 1.2A, 10V | 3.6Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 10 nC @ 10 V | 20 nC @ 10 V | 17 nC @ 10 V | 17 nC @ 10 V |
| Vgs (Max) | ±20V | ±30V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 135 pF @ 25 V | 330 pF @ 25 V | 410 pF @ 25 V | 170 pF @ 25 V | 170 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 36W (Tc) | 36W (Tc) | 50W (Tc) | 3.1W (Ta), 36W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount | Through Hole |
| Supplier Device Package | TO-220AB | TO-220 | TO-220AB | D²PAK (TO-263) | I2PAK |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA |
