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| Part Number | IRF620B | IRF620S | IRF620L | IRF610B | IRF620 |
|---|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | Vishay Siliconix | Vishay Siliconix | Fairchild Semiconductor | Harris Corporation |
| Product Status | Active | Obsolete | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) | 5.2A (Tc) | 5.2A (Tc) | 3.3A (Tc) | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V | 800mOhm @ 3.1A, 10V | 800mOhm @ 3.1A, 10V | 1.5Ohm @ 1.65A, 10V | 800mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 14 nC @ 10 V | 14 nC @ 10 V | 9.3 nC @ 10 V | 27 nC @ 10 V |
| Vgs (Max) | ±30V | ±20V | ±20V | ±30V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | 260 pF @ 25 V | 260 pF @ 25 V | 225 pF @ 25 V | 350 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 47W (Tc) | 3W (Ta), 50W (Tc) | - | 38W (Tc) | 70W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220 | D²PAK (TO-263) | I2PAK | TO-220 | TO-220AB |
| Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-220-3 |
