HUFA76429D3S
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Fairchild Semiconductor HUFA76429D3S

Manufacturer No:
HUFA76429D3S
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
HUFA76429D3S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 20A TO252AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Part Number HUFA76429D3S HUFA76629D3S   HUFA76429D3ST   HUFA76429S3S   HUFA76409D3S   HUFA76419D3S   HUFA76423D3S   HUFA76429D3  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 20A (Tc) 47A (Tc) 18A (Tc) 20A (Tc) 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V 52mOhm @ 20A, 10V 23mOhm @ 20A, 10V 22mOhm @ 47A, 10V 63mOhm @ 18A, 10V 37mOhm @ 20A, 10V 32mOhm @ 20A, 10V 23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V 46 nC @ 10 V 15 nC @ 10 V 27.5 nC @ 10 V 34 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±16V ±16V ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 25 V 1285 pF @ 25 V 1480 pF @ 25 V 1480 pF @ 25 V 485 pF @ 25 V 900 pF @ 25 V 1060 pF @ 25 V 1480 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 49W (Tc) 75W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) D²PAK (TO-263) TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA I-PAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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