HUFA76419D3S
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Fairchild Semiconductor HUFA76419D3S

Manufacturer No:
HUFA76419D3S
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
HUFA76419D3S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 20A TO252AA
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:37mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number HUFA76419D3S HUFA76419D3ST   HUFA76429D3S   HUFA76419S3S   HUFA76619D3S   HUFA76409D3S   HUFA76413D3S   HUFA76419D3  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 100 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 20A (Tc) 29A (Tc) 18A (Tc) 18A (Tc) 20A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 20A, 10V 37mOhm @ 20A, 10V 23mOhm @ 20A, 10V 35mOhm @ 29A, 10V 85mOhm @ 18A, 10V 63mOhm @ 18A, 10V 49mOhm @ 20A, 10V 37mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27.5 nC @ 10 V 27.5 nC @ 10 V 46 nC @ 10 V 28 nC @ 10 V 29 nC @ 10 V 15 nC @ 10 V 20 nC @ 10 V 27.5 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±16V ±16V ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 900 pF @ 25 V 1480 pF @ 25 V 900 pF @ 25 V 767 pF @ 25 V 485 pF @ 25 V 645 pF @ 25 V 900 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 75W (Tc) 75W (Tc) 110W (Tc) 75W (Tc) 75W (Tc) 49W (Tc) 60W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Supplier Device Package TO-252, (D-Pak) TO-252AA TO-252, (D-Pak) D2PAK (TO-263) TO-252AA TO-252, (D-Pak) TO-252, (D-Pak) I-PAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-251-3 Short Leads, IPak, TO-251AA

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