HUFA76409D3ST
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Fairchild Semiconductor HUFA76409D3ST

Manufacturer No:
HUFA76409D3ST
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
HUFA76409D3ST Datasheet
ECAD Model:
-
Description:
N-CHANNEL LOGIC LEVEL ULTRAFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):49W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number HUFA76409D3ST HUFA76609D3ST   HUFA76419D3ST   HUFA76429D3ST   HUFA76407D3ST   HUFA76409D3S  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 10A (Tc) 20A (Tc) 20A (Tc) 12A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 18A, 10V 160mOhm @ 10A, 10V 37mOhm @ 20A, 10V 23mOhm @ 20A, 10V 92mOhm @ 13A, 10V 63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 16 nC @ 10 V 27.5 nC @ 10 V 46 nC @ 10 V 11.3 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V 425 pF @ 25 V 900 pF @ 25 V 1480 pF @ 25 V 350 pF @ 25 V 485 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 49W (Tc) 49W (Tc) 75W (Tc) 110W (Tc) 38W (Tc) 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak) TO-252AA TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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