HUFA75617D3S
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Fairchild Semiconductor HUFA75617D3S

Manufacturer No:
HUFA75617D3S
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Datasheet:
HUFA75617D3S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 16A TO252AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):64W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number HUFA75617D3S HUFA75617D3ST  
Manufacturer Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V 90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 20 V 39 nC @ 20 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V 570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 64W (Tc) 64W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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