HUFA75309T3ST
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Fairchild Semiconductor HUFA75309T3ST

Manufacturer No:
HUFA75309T3ST
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
HUFA75309T3ST Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 3A SOT223-4
Delivery:
Payment:
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:352 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number HUFA75309T3ST HUFA75307T3ST  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 3A, 10V 90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 20 V 17 nC @ 20 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 352 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.1W (Ta) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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