HUFA75307D3ST
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Fairchild Semiconductor HUFA75307D3ST

Manufacturer No:
HUFA75307D3ST
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Datasheet:
HUFA75307D3ST Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 15A TO252AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$0.22
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Similar Products

Part Number HUFA75307D3ST HUFA75307T3ST   HUFA75307D3S  
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 2.6A (Ta) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 15A, 10V 90mOhm @ 2.6A, 10V 90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 20 V 17 nC @ 20 V 20 nC @ 20 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V 250 pF @ 25 V 250 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 45W (Tc) 1.1W (Ta) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) SOT-223-4 TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-261-4, TO-261AA TO-252-3, DPak (2 Leads + Tab), SC-63

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