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| Part Number | HUF75637P3 | HUF75639P3 | HUF75337P3 | HUF75631P3 |
|---|---|---|---|---|
| Manufacturer | Fairchild Semiconductor | onsemi | Harris Corporation | Fairchild Semiconductor |
| Product Status | Obsolete | Active | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 55 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) | 56A (Tc) | 75A (Tc) | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V | 25mOhm @ 56A, 10V | 14mOhm @ 75A, 10V | 40mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 20 V | 130 nC @ 20 V | 109 nC @ 20 V | 79 nC @ 20 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V | 2000 pF @ 25 V | 1775 pF @ 25 V | 1220 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 155W (Tc) | 200W (Tc) | 175W (Tc) | 120W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
