Fairchild Semiconductor-HGTD3N60A4S - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	17 A
Current - Collector Pulsed (Icm):	40 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 3A
Power - Max:	70 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	32 nC
Td (on/off) @ 25°C:	6ns/73ns
Test Condition:	390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3 (DPAK)

Fairchild Semiconductor HGTD3N60A4S