Fairchild Semiconductor-HGT1S7N60A4DS - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	34 A
Current - Collector Pulsed (Icm):	56 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 7A
Power - Max:	125 W
Switching Energy:	55µJ (on), 60µJ (off)
Input Type:	Standard
Gate Charge:	37 nC
Td (on/off) @ 25°C:	11ns/100ns
Test Condition:	390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr):	34 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK (TO-263)

Fairchild Semiconductor HGT1S7N60A4DS