Fairchild Semiconductor-HGT1S2N120CN - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	13 A
Current - Collector Pulsed (Icm):	20 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 2.6A
Power - Max:	104 W
Switching Energy:	96µJ (on), 355µJ (off)
Input Type:	Standard
Gate Charge:	30 nC
Td (on/off) @ 25°C:	25ns/205ns
Test Condition:	960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262

Fairchild Semiconductor HGT1S2N120CN